PART |
Description |
Maker |
MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培,功率场效应晶体000伏特的RDS(on)\u003d 0.80欧姆 TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA From old datasheet system TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semiconductor
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APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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APT14F100S APT14F100B09 |
Power FREDFET; Package: D3 [S]; ID (A): 14; RDS(on) (Ohms): 0.98; BVDSS (V): 1000; 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel FREDFET 14 A, 1000 V, 0.98 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp. Microsemi Corporation MICROSEMI POWER PRODUCTS GROUP
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MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
|
ZFSC-2-4 |
Power Splitter/Combiner 2 Way-0 50楼? 0.2 to 1000 MHz Power Splitter/Combiner 2 Way-0 50惟 0.2 to 1000 MHz Power Splitter/Combiner 2 Way-0 50Ω 0.2 to 1000 MHz
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Mini-Circuits
|
SMA18-1 A18-1 A18-1_1 CA18-1 A18-11 |
10 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Cascadable Amplifier 10 to 1000 MHz
|
MACOM[Tyco Electronics]
|
ZFL-1000VH |
Amplifier 50惟 Medium Power 10 to 1000 MHz Amplifier 50Ω Medium Power 10 to 1000 MHz
|
Mini-Circuits
|
LF2805A |
RF MOSFET Power Transistor, 5W, 28V 500 - 1000 MHz UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF MOSFET Power Transistor/ 5W/ 28V 500 - 1000 MHz
|
Tyco Electronics
|
IXFX24N100 IXFK24N100F IXFK24N100 IXFKB24N100 IXFK |
HiPerRF Power MOSFETs 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA HiPerRF Power MOSFETs 24 A, 1000 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
IXYS, Corp. IXYS[IXYS Corporation]
|
R76QD1100SE40J |
Capacitor, film, 1000 pF, /-5% Tol, -55/ 105C, General Purpose, 1000 VDC@85C, Lead Spacing=7.5 mm
|
Kemet Corporation
|
APT10021JLL_04 APT10021JLL APT10021JLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
PA1215 |
800-1000 MHz. Low Noise High Dynamic Range Linear Amplifier 800 MHz - 1000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER M24308/4-2F
|
Tyco Electronics
|
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